Helium behaviour in implanted boron carbide

Boron carbide/n-silicon carbide heterojunction diodes

Magnetoresistance in boron carbide junctions

Superconductivity in heavily boron-doped silicon carbide.

The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped ...

Breaking the icosahedra in boron carbide.

Findings of laser-assisted atom probe tomography experiments on boron carbide elucidate an approach for characterizing the atomic structure and interatomic bonding of molecules associated with extraordinary structural stability. The discovery of crystallographic planes in these boron carbide datasets substantiates that crystallinity is maintained to the point of field evaporation, and character...

Metal gettering by boron-silicide precipitates in boron-implanted silicon

Sandia National Laboratories, Albuquerque, New Mexico 871 85-1 056 PT"3 1 j 3 r 3 q a,,3 We show that Fe, Coy Cu, and Au impurities in Si are strongly gettered to boron-silicideprecipitates formed by supersaturation B implantation and annealing. Effective binding fr energies relative to interstitial solution range from somewhat above 1 to more than 2 eV. The B-Si precipitates formed at temperat...